Investigation of vertical compositional gradients in Cu(In,Ga)Se2 by highly spatially and spectrally resolved cathodoluminescence microscopy
Identifieur interne : 000989 ( Main/Repository ); précédent : 000988; suivant : 000990Investigation of vertical compositional gradients in Cu(In,Ga)Se2 by highly spatially and spectrally resolved cathodoluminescence microscopy
Auteurs : RBID : Pascal:13-0229195Descripteurs français
- Pascal (Inist)
- Gradient vertical, Gradient concentration, Résolution spatiale, Cathodoluminescence, Séléniure d'indium, Couche mince, Epaisseur couche, Evaporation, Effet dimensionnel, Distribution aléatoire, Section efficace, Coupe transversale, Méthode optique, Cuivre, Gallium, Polycristal, Séléniure de cuivre, Séléniure de gallium, 7860H, 6855J.
- Wicri :
- concept : Cuivre.
English descriptors
- KwdEn :
Abstract
Polycrystalline Cu(In,Ga)Se2 (CIGS) thin films with thicknesses of 1.1 μm, 2.4 μm and 2.9 μm were grown using an in-line co-evaporation process with a final Cu-poor composition. The different film thicknesses were achieved by a variation of the process speed under constant evaporation rates. We analyze CIGS thin films by means of highly spatially (<160 nm) and spectrally resolved cathodoluminescence microscopy at low temperature (T = 5 K). The integral spectrum of the investigated samples is dominated by donor-acceptor-pair recombination around 1.15 eV for the thinner samples and around 1.20 eV for the thickest sample. The surface shows a Gaussian and therefore fully random distribution of the peak wavelength. An investigation of the cross-sections reveals a shift of the peak energies to lower energies towards the surface of the layers for all samples and thus visualizes the local vertical gradient of the Ga/(Ga + In) ratio of the samples via an optical method. The extent of this shift increases significantly from 13 meV to 130 meV with decreasing process speed. .
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Pascal:13-0229195Le document en format XML
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by highly spatially and spectrally resolved cathodoluminescence microscopy</title>
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<author><name sortKey="Paetel, Stefan" uniqKey="Paetel S">Stefan Paetel</name>
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<wicri:noRegion>Industriestrasse 6</wicri:noRegion>
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<author><name sortKey="Powalla, Michael" uniqKey="Powalla M">Michael Powalla</name>
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<s2>70565 Stuttgart</s2>
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<wicri:noRegion>Industriestrasse 6</wicri:noRegion>
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<title level="j" type="abbreviated">Thin solid films</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Cathodoluminescence</term>
<term>Concentration gradient</term>
<term>Copper</term>
<term>Copper selenides</term>
<term>Cross section</term>
<term>Cross sections</term>
<term>Evaporation</term>
<term>Gallium</term>
<term>Gallium selenides</term>
<term>Indium selenides</term>
<term>Layer thickness</term>
<term>Optical method</term>
<term>Polycrystals</term>
<term>Random distribution</term>
<term>Size effect</term>
<term>Spatial resolution</term>
<term>Thin films</term>
<term>Vertical gradient</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Gradient vertical</term>
<term>Gradient concentration</term>
<term>Résolution spatiale</term>
<term>Cathodoluminescence</term>
<term>Séléniure d'indium</term>
<term>Couche mince</term>
<term>Epaisseur couche</term>
<term>Evaporation</term>
<term>Effet dimensionnel</term>
<term>Distribution aléatoire</term>
<term>Section efficace</term>
<term>Coupe transversale</term>
<term>Méthode optique</term>
<term>Cuivre</term>
<term>Gallium</term>
<term>Polycristal</term>
<term>Séléniure de cuivre</term>
<term>Séléniure de gallium</term>
<term>7860H</term>
<term>6855J</term>
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<front><div type="abstract" xml:lang="en">Polycrystalline Cu(In,Ga)Se<sub>2</sub>
(CIGS) thin films with thicknesses of 1.1 μm, 2.4 μm and 2.9 μm were grown using an in-line co-evaporation process with a final Cu-poor composition. The different film thicknesses were achieved by a variation of the process speed under constant evaporation rates. We analyze CIGS thin films by means of highly spatially (<160 nm) and spectrally resolved cathodoluminescence microscopy at low temperature (T = 5 K). The integral spectrum of the investigated samples is dominated by donor-acceptor-pair recombination around 1.15 eV for the thinner samples and around 1.20 eV for the thickest sample. The surface shows a Gaussian and therefore fully random distribution of the peak wavelength. An investigation of the cross-sections reveals a shift of the peak energies to lower energies towards the surface of the layers for all samples and thus visualizes the local vertical gradient of the Ga/(Ga + In) ratio of the samples via an optical method. The extent of this shift increases significantly from 13 meV to 130 meV with decreasing process speed. .</div>
</front>
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<fA12 i1="05" i2="1"><s1>KATAGIRI (Hirono)</s1>
<s9>ed.</s9>
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<fA14 i1="01"><s1>Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, Universitaetsplatz 2</s1>
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<fC01 i1="01" l="ENG"><s0>Polycrystalline Cu(In,Ga)Se<sub>2</sub>
(CIGS) thin films with thicknesses of 1.1 μm, 2.4 μm and 2.9 μm were grown using an in-line co-evaporation process with a final Cu-poor composition. The different film thicknesses were achieved by a variation of the process speed under constant evaporation rates. We analyze CIGS thin films by means of highly spatially (<160 nm) and spectrally resolved cathodoluminescence microscopy at low temperature (T = 5 K). The integral spectrum of the investigated samples is dominated by donor-acceptor-pair recombination around 1.15 eV for the thinner samples and around 1.20 eV for the thickest sample. The surface shows a Gaussian and therefore fully random distribution of the peak wavelength. An investigation of the cross-sections reveals a shift of the peak energies to lower energies towards the surface of the layers for all samples and thus visualizes the local vertical gradient of the Ga/(Ga + In) ratio of the samples via an optical method. The extent of this shift increases significantly from 13 meV to 130 meV with decreasing process speed. .</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B70H60H</s0>
</fC02>
<fC02 i1="02" i2="3"><s0>001B60H55J</s0>
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<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="ENG"><s0>Vertical gradient</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="SPA"><s0>Gradiente vertical</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="X" l="FRE"><s0>Gradient concentration</s0>
<s5>02</s5>
</fC03>
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<s5>02</s5>
</fC03>
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<s5>02</s5>
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<s5>03</s5>
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<s5>03</s5>
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<s5>04</s5>
</fC03>
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<s5>04</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Séléniure d'indium</s0>
<s2>NK</s2>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Indium selenides</s0>
<s2>NK</s2>
<s5>05</s5>
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<s5>06</s5>
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<s5>06</s5>
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<s5>07</s5>
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<s5>07</s5>
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<s5>07</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Evaporation</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Evaporation</s0>
<s5>08</s5>
</fC03>
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<s5>09</s5>
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<s5>09</s5>
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<s5>10</s5>
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<fC03 i1="10" i2="X" l="ENG"><s0>Random distribution</s0>
<s5>10</s5>
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<s5>10</s5>
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<s5>11</s5>
</fC03>
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<s5>11</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE"><s0>Coupe transversale</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG"><s0>Cross section</s0>
<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA"><s0>Corte transverso</s0>
<s5>12</s5>
</fC03>
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<s5>13</s5>
</fC03>
<fC03 i1="13" i2="X" l="ENG"><s0>Optical method</s0>
<s5>13</s5>
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<fC03 i1="13" i2="X" l="SPA"><s0>Método óptico</s0>
<s5>13</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Cuivre</s0>
<s2>NC</s2>
<s5>15</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Copper</s0>
<s2>NC</s2>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>Gallium</s0>
<s2>NC</s2>
<s5>16</s5>
</fC03>
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<s2>NC</s2>
<s5>16</s5>
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<s2>NK</s2>
<s5>18</s5>
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<s2>NK</s2>
<s5>18</s5>
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<s2>NK</s2>
<s5>19</s5>
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<s2>NK</s2>
<s5>19</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>7860H</s0>
<s4>INC</s4>
<s5>71</s5>
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<s4>INC</s4>
<s5>72</s5>
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<fN21><s1>210</s1>
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<fN44 i1="01"><s1>OTO</s1>
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<pR><fA30 i1="01" i2="1" l="ENG"><s1>E-MRS Spring Meeting 2012. Symposium B "Thin Film Chalcogenide Photovoltaic Materials"</s1>
<s3>Strasbourg FRA</s3>
<s4>2012-05-14</s4>
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